unisonic technologies co., ltd 2n3904 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r201-027, d npn general purpose amplifier ? features * collector-emitter voltage: v ceo =40v * collector dissipation: p c(max) =625mw * complementary to 2n3906 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2n3904l-t92-b 2N3904G-T92-B to-92 e b c tape box 2n3904l-t92-k 2n3904g-t92-k to-92 e b c bulk 2n3904l-t92-r 2n3904g-t92-r to-92 e b c tape reel
2n3904 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-027, d ? absolute maximum rating (t a =25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 200 ma collector dissipation p c 625 mw junction temperature t j 150 operating and stor age temperature t stg -55 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =10 a, i e =0 60 v collector-emitter breakdown voltage bv ceo i c =1ma,i b =0 (note) 40 v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 6 v collector-emitter satu ration voltage (note) v ce ( sat ) 1 i c =10ma, i b =1ma 0.2 v v ce ( sat ) 2 i c =50ma, i b =5ma 0.3 v base-emitter satura tion voltage (note) v be ( sat ) 1 i c =10ma, i b =1ma 0.65 0.85 v v be ( sat ) 2 i c =50ma, i b =5ma 0.95 v collector cut-off current i cbo v ce =30v, v eb =3v 50 na base cut-off current i bl v ce =30v, v eb =3v 50 na dc current gain (note) h fe1 v ce =1v, i c =0.1ma 40 h fe2 v ce =1v, i c =1ma 70 h fe3 v ce =1v, i c =10ma 100 300 h fe4 v ce =1v, i c =50ma 60 h fe5 v ce =1v, i c =100ma 30 current gain bandwidth product f t v ce =20v, i c =10ma, f=100mhz 300 mhz output capacitance c ob v cb =5v, i e =0, f=1mhz 4 pf turn on time t on v cc =3v,v be =0.5v,i c =10ma, i b 1=1ma 70 ns turn off time t off i b 1=1 b 2=1ma 250 ns note: pulse test: pulse width Q 300 s, duty cycle Q 2%
2n3904 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-027, d ? typical characteristics h fe vs. i c v ce =1v 0.1 0.3 0.5 1 5 3 10 30 50100 collector current, i c (ma) 0 40 80 120 160 200 240 dc current gain, h fe f t vs. i c 0.1 0.3 0.5 1 5 3 10 30 50100 collector current, i c (ma) 10 30 50 100 300 500 1000 current gain-bandwidth product, f t (mhz) v ce =20v saturation voltage, v be(sat) , v ce(sat) capacitance, c ob (pf) v o l t a g e , v ( v ) v o l t a g e , v ( v )
2n3904 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-027, d ? typical characteristics(cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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